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2SK996 Inchange Semiconductor N-Channel MOSFET Transistor

Description ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE NIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ ...
Features hreshold Voltage VDS=25 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=480V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=2A; RL=75Ω 2SK996 MIN TYP MAX UNIT 600 V 1.0 5.0 V 1.2 1.8 Ω ±1 uA 0.1 mA 40 ...

Datasheet PDF File 2SK996 Datasheet - 200.37KB

2SK996  






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