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2SC6098 Inchange Semiconductor Silicon NPN Power Transistor

Description ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter...
Features IC= 1A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 100mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 4...

Datasheet PDF File 2SC6098 Datasheet - 250.99KB

2SC6098  






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