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Inchange Semiconductor
Inchange Semiconductor

2SA1184 Datasheet Preview

2SA1184 Datasheet

POWER TRANSISTOR

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2SA1184 pdf
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Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
IBB Base current
PD Total power dissipation
Ta=25
TC=25
Tj Junction temperature
Tstg Storage temperature
Product Specification
2SA1184
·
VALUE
-120
-120
-5
-1
-0.1
1.5
15
150
-55+150
UNIT
V
V
V
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1184 Datasheet Preview

2SA1184 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1184 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10μA; IC=0
VCEsat Collector-emitter saturation voltage IC=-500mA; IB=B -50mA
VBE Base-emitter on voltage
IC=-500mA ; VCE=-5V
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-100mA ; VCE=-5V
fT Transition frequency
IC=-0.1A ; VCE=5V
Product Specification
2SA1184
MIN TYP. MAX UNIT
-120
V
-5 V
-1.0 V
-1.0 V
-1 μA
-1 μA
80 240
120 MHz
2


Part Number 2SA1184
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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