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2SA1170 Datasheet

POWER TRANSISTOR

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1170
DESCRIPTION
·With MT-200 package
·High power dissipation
·Complement to type 2SC2774
APPLICATIONS
·Audio and general purpose applications
PINNING (see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IBB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-200
-200
-6
-17
-5
200
150
-55~150
UNIT
V
V
V
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1170 Datasheet Preview

2SA1170 Datasheet

POWER TRANSISTOR

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2SA1170 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ; IB=B 0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-1A
ICBO Collector cut-off current
VCB=-200V; IE=0
IEBO Emitter cut-off current
VEB=-6V; IC=0
hFE DC current gain
IC=-8A ; VCE=-4V
fT Transition frequency
IC=-1A ; VCE=-12V
Switching times
tr Rise time
tstg Storage time
tf Fall time
IC=-10A; IB1=- IB2=-1A
RL=4Ω;VCC=-40V
Product Specification
2SA1170
MIN TYP. MAX UNIT
-200
V
-6 V
-2.5 V
-100 μA
-100 μA
20
20 MHz
0.6 μs
0.9 μs
0.2 μs
2


Part Number 2SA1170
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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