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Inchange Semiconductor
Inchange Semiconductor

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2SA1141 Datasheet

POWER TRANSISTOR

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2SA1141 pdf
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Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SC2681
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Product Specification
2SA1141
·
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-115
-115
-5
-10
-15
100
2
150
-55~150
UNIT
V
V
V
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1141 Datasheet Preview

2SA1141 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1141 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-4.5A ;IB=-0.45A
VBE Base-emitter on voltage
IC=-4.5A ; VCE=-2V
ICBO Collector cut-off current
VCB=-80V; IE=0
IEBO Emitter cut-off current
hFE -1
DC current gain
hFE -2
DC current gain
VEB=-5V; IC=0
IC=-1A ; VCE=-2V
IC=-4.5A ; VCE=-2V
COB Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT Transition frequency
IC=-1A ; VCE=-2V
‹ hFE-1 classifications
RQ
60-120
100-200
Product Specification
2SA1141
MIN TYP. MAX UNIT
-0.7 -1.5
V
-1.2 -2.0
V
-50 μA
-50 μA
60 200
40
390 pF
90 MHz
2


Part Number 2SA1141
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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