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Inchange Semiconductor
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2SA1107 Datasheet

POWER TRANSISTOR

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1107
DESCRIPTION
·With MT-200 package
·High power dissipations
APPLICATIONS
·Audio and general purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-150
-150
-5
-10
120
150
-55~150
UNIT
V
V
V
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1107 Datasheet Preview

2SA1107 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1107 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=B 0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=B -0.5A
VBE Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO Collector cut-off current
VCB=-140V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT Transition frequency
IC=-0.5A ; VCE=-10V
Product Specification
2SA1107
MIN TYP. MAX UNIT
-150
V
-5 V
-2.0 V
-2.0 V
-10 μA
-10 μA
55 160
35
50 MHz
2


Part Number 2SA1107
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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