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Inchange Semiconductor
Inchange Semiconductor

2SA1096 Datasheet Preview

2SA1096 Datasheet

POWER TRANSISTOR

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2SA1096 pdf
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1096 2SA1096A
DESCRIPTION
·With TO-126 package
·Complement to type 2SC2497/2SC2497A
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
·
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector- emitter voltage
2SA1096
2SA1096A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
PD Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
VALUE
-70
-50
-60
-5
-2
-3
1.2*1
5*2
150
-55+150
UNIT
V
V
V
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1096 Datasheet Preview

2SA1096 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1096 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1096 2SA1096A
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA1096
2SA1096A
IC=-2mA ; IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A
VBEsat Base-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
ICEO Collector cut-off current
VCE=-10V; IB=0
ICBO Collector cut-off current
VCB=-20V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-1A ; VCE=-5V
COB Output capacitance
IE=0 ; VCB=-20V,f=1MHz
fT Transition frequency
IE=-0.5A ; VCB=-5V,f=200MHz
MIN TYP. MAX UNIT
-50
V
-60
-70 V
-1.0 V
-1.5 V
-1 μA
-100 μA
-10 μA
80 220
55 pF
150 MHz
‹ hFE Classifications
QR
80-160
120-220
2


Part Number 2SA1096
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 5 Pages
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