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Inchange Semiconductor
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2SA1095 Datasheet Preview

2SA1095 Datasheet

POWER TRANSISTOR

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1095
DESCRIPTION
·With MT-200 package
·Complement to type 2SC2565
·High breakdown voltage
·High transition frequency
APPLICATIONS
·Power amplifier applications
·Recommended for 100W high-fidelity audio
frequency amplifer output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
·
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
IE
Emitter-base voltage
Collector current
Emitter current
PC Collectorl power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-160
-160
-5
-15
15
150
150
-55~150
UNIT
V
V
V
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1095 Datasheet Preview

2SA1095 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1095 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-100mA; IB=B 0
V(BR)EBO Emitter-base breakdown voltage
IE=-10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=B -0.5 A
VBE Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO Collector cut-off current
VCB=-160V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT Transition frequency
IC=-1A ; VCE=-10V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
‹ hFE classifications
ROY
55-110 80-160 120-240
Product Specification
2SA1095
MIN TYP. MAX UNIT
-160
V
-5 V
-2.0 V
-2.0 V
-50 μA
-50 μA
55 240
40
60 MHz
350 pF
2


Part Number 2SA1095
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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