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Inchange Semiconductor
Inchange Semiconductor

2SA1094 Datasheet Preview

2SA1094 Datasheet

Power Transistor

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2SA1094 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1094
DESCRIPTION
·With MT-200 package
·Complement to type 2SC2564
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IBB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-140
-140
-5
-12
-1.2
120
150
-55~150
UNIT
V
V
V
A
A
W
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Inchange Semiconductor
Inchange Semiconductor

2SA1094 Datasheet Preview

2SA1094 Datasheet

Power Transistor

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2SA1094 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ; IB=B 0
V(BR)EBO Emitter-base breakdown voltage
IE=-0.01A ; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=B -0.5A
VBE Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO Collector cut-off current
VCB=-140V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
Cob Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT Transition frequency
IC=-1A ; VCE=-10V
‹ hFE-1 classifications
ROY
55-110 80-160 120-240
Product Specification
2SA1094
MIN TYP. MAX UNIT
-140
V
-5 V
-2.0 V
-2.0 V
-50 μA
-50 μA
55 240
30
220 pF
70 MHz
2


Part Number 2SA1094
Description Power Transistor
Maker Inchange Semiconductor
Total Page 3 Pages
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