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Inchange Semiconductor
Inchange Semiconductor

2SA1069 Datasheet Preview

2SA1069 Datasheet

POWER TRANSISTOR

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2SA1069 pdf
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1069 2SA1069A
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2516/2516A
·Low collector saturation voltage
APPLICATIONS
·Switching regulators
·DC-DC converters
·High-frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
2SA1069
2SA1069A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-Peak
IBB Base current
PC Collector power dissipation
Ta=25
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-80
-60
-80
-12
-5
-10
-2.5
1.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1069 Datasheet Preview

2SA1069 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1069 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1069 2SA1069A
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2SA1069
2SA1069A
IC=-3.0A ,IB=-0.3A;L=1mH
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBEsat Base-emitter saturation voltage
IC=-3A; IB=-0.3A
ICBO
Collector
cut-off current
2SA1069 VCB=-60V; IE=0
2SA1069A VCB=-80V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.3A ; VCE=-5V
hFE-2
DC current gain
IC=-3A ; VCE=-5V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=-3A ; VCC=-50V
IB1=-IB2=-0.3A;RL=17Ω
‹ hFE-2 Classifications
ML K
40-80 60-120 100-200
MIN TYP. MAX UNIT
-60
V
-80
-0.6 V
-1.5 V
-10 μA
-10 μA
40
40 200
0.5 μs
2.5 μs
0.5 μs
2


Part Number 2SA1069
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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