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Inchange Semiconductor
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2SA1069-Z Datasheet Preview

2SA1069-Z Datasheet

Silicon PNP Power Transistor

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2SA1069-Z pdf
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1069-Z
DESCRIPTION
·Low Collector Saturation Voltage
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-speed switching, and is ideal for use
as a driver in devices such as switching regulators,DC/DC
converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80 V
VCEO Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-12 V
IC Collector Current-Continuous
-5 A
ICM Collector Current-Peak
-10 A
IB Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
-2.5 A
1.5
W
30
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



Inchange Semiconductor
Inchange Semiconductor

2SA1069-Z Datasheet Preview

2SA1069-Z Datasheet

Silicon PNP Power Transistor

No Preview Available !

2SA1069-Z pdf
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1069-Z
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3.0A ; IB= -0.3A, L=1mH
VCEX(SUS)-1
VCEX(SUS)-2
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
IC= -3.0A ; IB1=-IB2= -0.3A,
VBE(OFF)=5.0V, L=180μH,clamped
IC= -6.0A ; IB1= -0.6A; IB2= -0.3A,
VBE(OFF)= 5.0V, L= 180μH,clamped
VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -3.0A; IB= -0.3A
VBE(sat)NOTE Base-Emitter Saturation Voltage
IC= -3.0A; IB= -0.3A
ICBO Collector Cutoff Current
VCB= -60V; IE= 0
ICER Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= -60V; RBE= 51Ω, Ta=125
VCE= -60V; VBE(off)= -1.5V
VCE= -60V; VBE(off)= -1.5V, Ta=125
VEB= -5V; IC=0
hFE-1NOTE DC Current Gain
IC= -0.3A; VCE= -5V
hFE-2NOTE DC Current Gain
IC= -3.0A; VCE= -5V
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
NOTE:Pulse test PW≤350us,duty cycle ≤2%
IC= -3.0A ,RL= 17Ω,
IB1= -IB2= -0.3A,VCC-50V
hFE-2 Classifications
ML K
40-80 60-120 100-200
MIN MAX UNIT
-60 V
-60 V
-60 V
-0.6 V
-1.5 V
-10 μA
-1.0 mA
-10 μA
-1.0 mA
-10 μA
40
40 200
0.5 μs
2.5 μs
0.5 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SA1069-Z
Description Silicon PNP Power Transistor
Maker Inchange Semiconductor
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