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Inchange Semiconductor
Inchange Semiconductor

2SA1062 Datasheet Preview

2SA1062 Datasheet

POWER TRANSISTOR

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2SA1062 pdf
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1062
DESCRIPTION
·With TO-3PN package
·Complement to type 2SC2486
·High collector power dissipation
APPLICATIONS
·High power audio frequency amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-5
-7
-12
80
150
-55~150
UNIT
V
V
V
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1062 Datasheet Preview

2SA1062 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1062 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=B -0.5A
VBE Base-emitter on voltage
IC=-5A;VCE=-5V
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
hFE-3
DC current gain
IC=-5A ; VCE=-5V
fT Transition frequency
IC=-0.5A ; VCE=-5V
‹ hFE-2 Classifications
RQ
P
40-80 60-120 100-200
Product Specification
2SA1062
MIN TYP. MAX UNIT
-120
V
-2.0 V
-1.8 V
-50 μA
-50 μA
20
40 200
20
20 MHz
2


Part Number 2SA1062
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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