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Inchange Semiconductor
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2SA1008 Datasheet Preview

2SA1008 Datasheet

POWER TRANSISTOR

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2SA1008 pdf
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Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2331
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC/DC converters
·High frequency power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA1008
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
IBB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-100
-100
-7
-2.0
-4.0
-1.0
1.5
15
150
-55~150
UNIT
V
V
V
A
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1008 Datasheet Preview

2SA1008 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1008 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-1.0A ,IB=-0.1A,L=1mH
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBEsat Base-emitter saturation voltage
IC=-1A ;IB=B -0.1A
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
IC=-1.0A IB1=- IB2=-0.1A
RL=50Ω;VCC50V
‹ hFE-2 Classifications
ML
K
40-80
60-120 100-200
Product Specification
2SA1008
MIN TYP. MAX UNIT
-100
V
-0.6 V
-1.5 V
-10 μA
-10 μA
40
40 200
0.5 μs
1.5 μs
0.5 μs
2


Part Number 2SA1008
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 5 Pages
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