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2N6837 Inchange Semiconductor Silicon NPN Power Transistor

Description · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching reg...
Features STICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.7 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6837 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ...

Datasheet PDF File 2N6837 Datasheet - 188.52KB

2N6837  






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