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2SD5702 Datasheet Preview

2SD5702 Datasheet

Silicon NPN Power Transistors

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2SD5702 pdf
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD5702
DESCRIPTION
With TO-3P(H)IS package
Built-in damper diode
High voltage ,high speed
APPLICATIONS
www.DataSheet4U.Fcoomr color display horizontal deflection
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
6
16
60
150
-55~150
UNIT
V
V
V
A
A
W



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2SD5702 Datasheet Preview

2SD5702 Datasheet

Silicon NPN Power Transistors

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2SD5702 pdf
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat
www.DataSheet4U.com
ICBO
Base-emitter saturation voltage
Collector cut-off current
IC=4A; IB=0.8A
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
VF Diode forward voltage
tf Fall time
IF=6A
IC=4A ;IB1=0.8A;IB2=-1.6A
VCC=200V; RL=50
Product Specification
2SD5702
MIN TYP. MAX UNIT
2.0 5.0
V
1.5 V
10 A
40 200 mA
10 30
5 15
3 MHz
2.0 V
0.4 s
2


Part Number 2SD5702
Description Silicon NPN Power Transistors
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Total Page 3 Pages
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