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IXYS Corporation
IXYS Corporation

L507 Datasheet Preview

L507 Datasheet

HiPerFRED Epitaxial Diode with soft recovery

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L507 pdf
DSEP 2x 101-04A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 2x 100 A
VRRM = 400 V
trr = 30 ns
VRSM
V
400
VRRM
V
400
Type
DSEP 2x 101-04A
miniBLOC, SOT-227 B
D4
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
VISOL
M
d
Weight
Conditions
TC = 60°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 4 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
50/60 Hz, RMS
IISOL 1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
Maximum Ratings
100 A
100 A
1000
2
A
mJ
0.4
-40...+150
150
-40...+150
200
2500
A
°C
°C
°C
W
V~
1.1-1.5/9-13
1.1-1.5/9-13
30
Nm/lb.in.
Nm/lb.in.
g
Symbol
IR
VF
RthJC
RthCH
trr
IRM
Conditions
VR = VRRM; TVJ = 25°C
TVJ = 150°C
IF = 100 A; TVJ = 125°C
TVJ = 25°C
with heatsink compound
IF = 1 A; -di/dt = 400 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 200 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
1 mA
4 mA
1.24
1.54
V
V
0.6 K/W
0.1 K/W
30 ns
5.5 6.8 A
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
Features
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I -values
RM
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
1-2



IXYS Corporation
IXYS Corporation

L507 Datasheet Preview

L507 Datasheet

HiPerFRED Epitaxial Diode with soft recovery

No Preview Available !

L507 pdf
DSEP 2x 101-04A
300
A
250
IF
200
150
100
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
50
2400
nC
2000
Qr
1600
1200
TVJ = 100°C
VR = 200 V
IF = 200 A
IF = 100 A
IF = 50 A
800
400
50
A
IRM 40
30
TVJ = 100°C
VR = 200 V
IF = 200 A
IF = 100 A
IF = 50 A
20
10
0
0.0 0.5 1.0 1.5 2.0 V 2.5
VF
Fig. 1 Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.5
Qr
0.0
0
40 80 120 °C 160
TVJ
Fig. 4 Typ. dynamic parameters
Qr, IRM versus TVJ
0
100 A/µs 1000
-diF/dt
Fig. 2 Typ. reverse recovery charge
Q versus -di /dt
rF
160
ns
140
trr
120
100
TVJ = 100°C
VR = 200 V
IF = 200 A
IF = 100 A
IF = 50 A
80
60
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 5 Typ. recovery time
trr versus -diF/dt
0
0 200 400 600 A80/µ0s 1000
-diF/dt
Fig. 3 Typ. peak reverse current
I versus -di /dt
RM F
60 tfr TVJ = 100°C
V IF = 100 A
50
VFR40
1.50
µs
1.25
tfr
1.00
30 0.75
20 0.50
10
VFR
0.25
0 0.00
0 200 400 600 A80/µ0s 1000
diF/dt
Fig. 6 Peak forward voltage
VFR and tfr versus diF/dt
1
K/W
0.1
ZthJC
0.01
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.212
2 0.248
3 0.063
4 0.077
0.0055
0.0092
0.0007
0.0391
0.001
0.0001
0.0001
0.001
0.01
0.1
Fig. 7 Transient thermal resistance junction to case
DSEP 2x101-04A
1s
t
10
2-2
© 2003 IXYS All rights reserved


Part Number L507
Description HiPerFRED Epitaxial Diode with soft recovery
Maker IXYS Corporation
Total Page 2 Pages
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