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IXYS Corporation
IXYS Corporation

IXFN44N50 Datasheet Preview

IXFN44N50 Datasheet

HiPerFET Power MOSFETs

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IXFN44N50 pdf
HiPerFETwww.DataSheet4U.coTmM
Power MOSFETs
IXFK / IXFN 44 N50
IXFK / IXFN 48 N50
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
VDSS
ID25
500 V 44 A
500 V 48 A
trr 250 ns
RDS(on)
0.12
0.10
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
Weight
Symbol
VDSS
V
GS(th)
IGSS
I
DSS
R
DS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
44N50
48N50
TC = 25°C,
pulse width limited by TJM
TC = 25°C
44N50
48N50
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
IXFK
IXFN
500 500
500 500
±20 ±20
±30 ±30
44 44
48 48
176 176
192 192
24 24
30 30
55
V
V
V
V
A
A
A
A
A
mJ
V/ns
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
V = V , I = 8 mA
DS GS D
VGS = ±20 VDC, VDS = 0
V = 0.8 • V
DS DSS
VGS = 0 V
T
J
=
25°C
TJ = 125°C
V = 10 V, I = 0.5 • I
GS D D25
44N50
48N50
Pulse test, t 300 µs, duty cycle d 2 %
500
2
V
4V
±200 nA
400 µA
2 mA
0.12
0.10
TO-264 AA
(IXFK)
G
D
S
(TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
G
S
S
G = Gate
S = Source
D
D = Drain
TAB = Drain
S
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l International standard packages
l Molding epoxies meet UL 94 V-0
flammability classification
l SOT-227B miniBLOC with aluminium
nitride isolation
l Low R HDMOSTM process
DS (on)
l Unclamped Inductive Switching (UIS)
rated
l Fast intrinsic rectifier
Applications
l DC-DC converters
l Synchronous rectification
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l Temperature and lighting controls
Advantages
l Easy to mount
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
C1 - 184
93001I (07/00)
© 2000 IXYS All rights reserved



IXYS Corporation
IXYS Corporation

IXFN44N50 Datasheet Preview

IXFN44N50 Datasheet

HiPerFET Power MOSFETs

No Preview Available !

IXFN44N50 pdf
IXFN / IXFK 44N50
IXFN / IXFK 48N50
www.DSaytamSbhoelet4U.coTmest Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
C
iss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
RthJC
RthCK
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
22 42
8400
900
280
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External),
30
60
100
30
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
270
60
135
nC
nC
nC
TO-264 AA
TO-264 AA
0.25 K/W
0.15 K/W
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.24 K/W
0.05 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
I Repetitive; pulse width limited by T
SM JM
VSD IF = 100 A, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
48 A
192 A
1.5 V
trr 250 ns
Q
RM
I
F
=
I,
S
-di/dt
=
100
A/µs,
V
R
=
100
V
TBD
µC
IRM 20 A
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000
.000
.800
.090
.010
.010
.820
.102
.125
.239
.330
.150
.070
.238
.062
.144
.247
.342
.170
.090
.248
.072
miniBLOC, SOT-227 B
© 2000 IXYS All rights reserved
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
C1 - 185


Part Number IXFN44N50
Description HiPerFET Power MOSFETs
Maker IXYS Corporation
Total Page 4 Pages
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