http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





IXYS
IXYS

T0850VB25E Datasheet Preview

T0850VB25E Datasheet

Insulated Gate Bi-Polar Transistor

No Preview Available !

T0850VB25E pdf
WESTCODE
An IXYS Company
Date:- 21 Jan, 2011
Data Sheet Issue:- P1
Prospective Data
Insulated Gate Bi-Polar Transistor
Type T0850VB25E
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
2500
1250
±20
UNITS
V
V
V
IC(DC)
ICRM
IECO
PMAX
Tjop
Tstg
RATINGS
Continuous DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
Maximum power dissipation, IGBT (Note 2)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) The use of an anti-parallel diode is recommended.
MAXIMUM
LIMITS
850
1700
850
4.4
-40 to +125
-40 to +125
UNITS
A
A
A
kW
°C
°C
Prospective Data Sheet T0850VB25E Issue P1
Page 1 of 6
January, 2011



IXYS
IXYS

T0850VB25E Datasheet Preview

T0850VB25E Datasheet

Insulated Gate Bi-Polar Transistor

No Preview Available !

T0850VB25E pdf
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0850VB25E
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.05
2.90
-
-
5.8
8
4
110
1.1
2
6.5
2
1.5
6
6
1.4
2400
MAX
2.35
3.20
1.29
2.25
6.3
25
±15
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 850A, VGE = 15V, Tj = 25°C
IC = 850A, VGE = 15V
Current range: 280 – 850A
VCE = VGE, IC = 75mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =850A, VCE =1250V, di/dt=1500A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 3.0Ω, Rg(OFF)=6.8Ω, CGE=100nF
Freewheel diode type E0800QC25C
(Note 3)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
11
-
TYP
-
-
-
-
0.65
MAX
22.5
35.3
65.3
16
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
Prospective Data Sheet T0850VB25E Issue P1
Page 2 of 6
January, 2011


Part Number T0850VB25E
Description Insulated Gate Bi-Polar Transistor
Maker IXYS
Total Page 6 Pages
PDF Download
T0850VB25E pdf
Download PDF File
T0850VB25E pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 T0850VB25E Insulated Gate Bi-Polar Transistor IXYS
IXYS
T0850VB25E pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components