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Integrated Silicon Solution Electronic Components Datasheet

IS65WV102416DBLL Datasheet

ULTRA LOW POWER & LOW POWER CMOS STATIC RAM

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IS65WV102416DBLL pdf
IS62/65WV102416DALL
IS62/65WV102416DBLL
1Mx16 LOW VOLTAGE,
ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
JANUARY 2015
KEY FEATURES
High-speed access time: 45ns, 55ns.
CMOS low power operation
25 µA (typical) CMOS standby
CMOS for optimum speed and power and TTL
compatible interface levels
Single power supply
1.65V~1.98V VDD
(IS62/65WV102416DALL)
2.2V~3.6V VDD
(IS62/65WV102416DBLL)
Fully static operation: no clock or refresh
required
Industrial and Automotive temperature support
DESCRIPTION
The ISSI IS62/65WV102416DALL,
IS62/65WV102416DBLL are ULTRA LOW POWER
CMOS 16Mbit static RAMs organized as 1M words
by 16 bits. It is fabricated using ISSI's high-
performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices. The IS62WV102416DALL/
DBLL and IS65WV102416DALL/DBLL are
packaged in 48-Pin TSOP (TYPE I).
BLOCK DIAGRAM
A0-19
A20
DECODER
I/O0-7
I/O8-14
I/O15
IO15
CONTROL CIRCUIT
, CS2
MEMORY ARRAY
(1024KX16)
(2048KX8)
COLUMN I/O
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
1


Integrated Silicon Solution Electronic Components Datasheet

IS65WV102416DBLL Datasheet

ULTRA LOW POWER & LOW POWER CMOS STATIC RAM

No Preview Available !

IS65WV102416DBLL pdf
IS62/65WV102416DALL
IS62/65WV102416DBLL
48-PIN TSOP-I
A15 1
A14 2
A13 3
A12 4
A11 5
A10 6
A9 7
A8 8
A19 9
NC 10
11
CS2 12
NC 13
14
15
A18 16
A17 17
A7 18
A6 19
A5 20
A4 21
A3 22
A2 23
A1 24
48 A16
47
46 Vss
45 I/O15/A20
44 I/O7
43 I/O14
42 I/O6
41 I/O13
40 I/O5
39 I/O12
38 I/O4
37 Vcc
36 I/O11
35 I/O3
34 I/O10
33 I/O2
32 I/O9
31 I/O1
30 I/O8
29 I/O0
28
27 Vss
26
25 A0
PIN DESCRIPTIONS
A0-A19
I/O0-I/O14
I/O15/A20
, CS2
NC
VDD
Vss
Address Inputs
Data Inputs/Outputs, I/O8 to I/O14 pins are not used in x8 Mode.
I/O15, when used in a x16 Mode. A20 when used in a x8 Mode,
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7). This pin is not used in x8 Mode.
Upper-byte Control (I/O8-I/O15). This pin is not used in x8 Mode.
pin must be tied to either VDD to use the device as a 1024Kx16
SRAM or GND to use as 2048Kx8 SRAM. In x8 mode, Pin 45
becomes A20, while , and I/O8 to I/O14 pins are not used.
No Connection
Power
Ground
*For x8/x16 switchable configuration BGA option, please contact sram@issi.com
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
2


Part Number IS65WV102416DBLL
Description ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
Maker ISSI
Total Page 15 Pages
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