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Integrated Silicon Solution Electronic Components Datasheet

IS61WV25632BLL Datasheet

256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

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IS61WV25632BLL pdf
IS61WV25632ALL/ALS
IS61WV25632BLL/BLS
IS64WV25632BLL/BLS
256K x 32 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
PRELIMINARY INFORMATION
APRIL 2008
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE op-
tions
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
Vdd 1.65V to 2.2V (IS61WV25632Axx)
speed = 20ns for Vdd 1.65V to 2.2V
Vdd 2.4V to 3.6V (IS61/64WV25632Bxx)
speed = 10ns for Vdd 2.4V to 3.6V
speed = 8ns for Vdd 3.3V + 5%
• Packages available:
90-ball miniBGA (8mm x 13mm)
• Industrial and Automotive Temperature Support
• Lead-free available
DESCRIPTION
The ISSI IS61WV25632Axx/Bxx and IS64WV25632Bxx
are high-speed, 8M-bit static RAMs organized as 256K
words by 32 bits. It is fabricated using ISSI's high-per-
formance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of
the memory.
The device is packaged in the JEDEC standard 90-ball
BGA (8mm x 13mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
VDD
VSS
DQa-d
DECODER
I/O
DATA
CIRCUIT
256K x 32
MEMORY ARRAY
COLUMN I/O
CE
OE
WE
BWa-d
CE2
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  00B
04/23/08
1


Integrated Silicon Solution Electronic Components Datasheet

IS61WV25632BLL Datasheet

256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

No Preview Available !

IS61WV25632BLL pdf
IS61WV25632ALL/ALS
IS61WV25632BLL/BLS
IS64WV25632BLL/BLS
PIN CONFIGURATION
package code: B 90 bALL fbga (Top View) (8.00 mm x 13.00 mm Body, 0.8 mm Ball Pitch)
123456789
A
DQ1 DQ0 VSS
B
DQ2 VDD VSS
C
VSS DQ3 DQ4
D
VSS DQ6 DQ5
E
VDD DQ7 NC
F
VSS BWa A3
G
A0 A1 A2
H
A15 A14 A13
J
CE2 A17 A16
K
BWb NC NC
L
VDD DQ8 VSS
M
VSS DQ9 DQ10
N
VSS DQ12 DQ11
P
DQ13 VDD VSS
R
DQ14 DQ15 VSS
VDD DQ31 DQ30
VDD VSS DQ29
DQ27 DQ28 VDD
DQ26 DQ25 VDD
NC DQ24 VSS
A4 BWd VDD
A10 A5 A6
A8 A7 A11
A9 A12 CE
OE WE BWc
VDD DQ23 VSS
DQ21 DQ22 VDD
DQ20 DQ19 VDD
VDD VSS DQ18
VDD DQ16 DQ17
PIN DESCRIPTIONS
A0-A17
Address Inputs
DQx
Data I/O
CE, CE2
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
BWx (x=a-d)
Byte Write Control
Vdd
Power
Vss
Ground
NC
No Connection
2 Integrated Silicon Solution, Inc. — www.issi.com
Rev.  00B
04/23/08


Part Number IS61WV25632BLL
Description 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Maker ISSI
Total Page 19 Pages
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