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International Rectifier Electronic Components Datasheet

F1404ZS Datasheet

IRF1404ZS

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F1404ZS pdf
PD - 94634B
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
G
TO-220AB
IRF1404Z
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
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IRF1404Z
IRF1404ZS
IRF1404ZL
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.7mΩ
S ID = 75A
D2Pak
IRF1404ZS
TO-262
IRF1404ZL
Max.
190
130
75
750
220
1.5
± 20
320
480
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
°C/W
1
10/12/11
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International Rectifier Electronic Components Datasheet

F1404ZS Datasheet

IRF1404ZS

No Preview Available !

F1404ZS pdf
IRF1404ZS_L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.033 –––
––– 2.7 3.7
eV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 75A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
170 ––– ––– V VDS = 25V, ID = 75A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 100 150
ID = 75A
Qgs Gate-to-Source Charge
––– 31 ––– nC VDS = 32V
eQgd
Gate-to-Drain ("Miller") Charge
––– 42 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 20V
tr Rise Time
––– 110 –––
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 36 ––– ns RG = 3.0 Ω
––– 58 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 4340 –––
––– 1030 –––
––– 550 –––
––– 3300 –––
––– 920 –––
––– 1350 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 750
A showing the
integral reverse
––– –––
––– 28
––– 34
1.3
42
51
ep-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
ens TJ = 25°C, IF = 75A, VDD = 20V
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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International Rectifier Electronic Components Datasheet

F1404ZS Datasheet

IRF1404ZS

No Preview Available !

F1404ZS pdf
IRF1404ZS_L
1000
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
1
0.1
0.1
4.5V
20μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
0.1
4.5V 20μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
1
4.0
VDS = 15V
20μs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
11.0
Fig 3. Typical Transfer Characteristics
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200
TJ = 175°C
160
120
TJ = 25°C
80
40
0
0
VDS = 15V
20μs PULSE WIDTH
40 80 120
ID, Drain-to-Source Current (A)
160
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3
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Part Number F1404ZS
Description IRF1404ZS
Maker IRF
Total Page 12 Pages
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