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INCHANGE Semiconductor
INCHANGE Semiconductor

BU180 Datasheet Preview

BU180 Datasheet

Silicon NPN Darlington Power Transistor

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BU180 pdf
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Spwewwc.iDfaitcaSaheteito4Un.com
BU180
DESCRIPTION
·Collector Current -IC= 10A
·DC Current Gain-
: hFE= 200(Min)@ IC= 5A
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for line operated switchmode applications
such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
i.cnABSOLUTE MAXIMUM RATINGS(Ta=25)
.iscsemSYMBOL
PARAMETER
VALUE UNIT
wwwVCBO
Collector-Base Voltage
320 V
VCEO
Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
10 A
50 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn



INCHANGE Semiconductor
INCHANGE Semiconductor

BU180 Datasheet Preview

BU180 Datasheet

Silicon NPN Darlington Power Transistor

No Preview Available !

BU180 pdf
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Spwewwc.iDfaitcaSaheteito4Un.com
BU180
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB=0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 20mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 20mA
ICEO Collector Cutoff Current
VCE= 200V; IB= 0
1.5 V
2.0 V
1.0 mA
ICBO Collector Cutoff Current
VCB= 320V;IE= 0
IEBO Emitter Cutoff Current
www.iscsemi.cnhFE DCCurrentGain
VEB= 8V; IC=0
IC= 5A; VCE= 5V
200
1.0 mA
10 mA
isc Websitewww.iscsemi.cn
2


Part Number BU180
Description Silicon NPN Darlington Power Transistor
Maker INCHANGE Semiconductor
Total Page 2 Pages
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