| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK40A06N1，ITK40A06N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =10.4mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB... |
| Features |
·Low drain-source on-resistance: RDS(ON) =10.4mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Sour... |
| Datasheet |
 TK40A06N1 Datasheet - 247.19KB |
