| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE703 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Colle... |
| Features |
RISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 40mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=-40mA
VBE(on)-1 Base-Emitter On Voltage
IC= 2A; VCE= 3V
VBE(on)-2 Base-Emitter On Volt...
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| Datasheet |
 MJE803 Datasheet - 210.46KB |
