| Description | isc N-Channel MOSFET Transistor IXTY2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source ... |
| Datasheet |
 IXTY2N60P Datasheet - 260.86KB |
