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IRF3709ZS INCHANGE N-Channel MOSFET

Description ·Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) ...
Features MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 30 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 1.35 2.25 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=21A 6.3 mΩ IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 24V; VGS= 0;Tj =25℃ VDS= 24V; VGS= 0;Tj...

Datasheet PDF File IRF3709ZS Datasheet - 243.18KB

IRF3709ZS  






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