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C2750 INCHANGE Silicon NPN Power Transistor

Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7V IC Collector Current-Cont...
Features B1= 1A; L= 100μH VCEX(SUS)1 Collector-Emitter Sustaining Voltage IC= 10A; IB1= -IB= 1A; Ta= 125℃ L= 180μH; Clamped VCEX(SUS)2 Collector-Emitter Sustaining Voltage IC= 20A; IB1= 2A; IB2= 1A; Ta= 125℃; L= 180μH; Clamped VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 100 150 100 V V V 0.6 V VBE(sat) Base-Emitter Saturation Vol...

Datasheet PDF File C2750 Datasheet - 205.81KB

C2750  






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