| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Collector Saturation Voltage : VCE(sat) = -2.0 V(Max) @ IC = -3.0 A ·Complement to Type BDX53A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIM... |
| Features |
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isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
VBE(sat) Base-Emitter Saturat...
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| Datasheet |
 BDX54A Datasheet - 211.12KB |
