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3DD159D INCHANGE NPN Transistor

Description ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Vol...
Features ARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 3mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 3mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A VBE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO Collector Cutoff C...

Datasheet PDF File 3DD159D Datasheet - 187.70KB

3DD159D  






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