| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Vol... |
| Features |
tor-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0 VCB= 110V; IE= 0
hFE
DC Current Gain
IC= 1A ; VCE= 4V
hFE Classifications
R
O
Y
40-80 70-150 130-260
2SD334
MIN TYP. MAX UNIT
80
V
7
V
2
V
2.5
V
50 μA
1
mA
40
260
NOTICE： ISC r...
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| Datasheet |
 2SD334 Datasheet - 202.29KB |
