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2SB1383 INCHANGE PNP Transistor

Description ·High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver of solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co...
Features SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ,IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -12A ,IB= -24mA -1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -12A ,IB= -24mA -2.5 V ICBO Collector Cutoff current VCB= -120V, IE= 0 -10 μA IEBO Emitter Cutoff...

Datasheet PDF File 2SB1383 Datasheet - 214.43KB

2SB1383  






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