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H9TP32A4GDBCPR - 4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32)

Datasheet Summary

Description

and is subject to change without notice.

for use of circuits described.

No patent licenses are implied.

Features

  • [ CI-MCP ].
  • Operation Temperature - (-25)oC ~ 85oC.
  • Package - 162-ball FBGA - 11.5x13.0mm2, 1.0t, 0.5mm pitch - Lead & Halogen Free [ e-NAND ] [ LPDDR2 S4B ].
  • Packaged NAND flash memory with MultiMediaCard interface.
  • e-NAND system specification, compliant with V4.41.
  • Full backward compatibility with previous eNAND system specification.
  • Bus mode - High-speed eMMC protocol. - Three different data bus widths: 1 bit, 4 bits,8 bits. - Data transfer rate: up to 104Mby.

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Datasheet Details

Part number H9TP32A4GDBCPR
Manufacturer Hynix Semiconductor
File Size 2.66 MB
Description 4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32)
Datasheet download datasheet H9TP32A4GDBCPR Datasheet
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CI-MCP Specification 4GB eNAND (x8) + 4Gb LPDDR2-S4B (x32) This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.3 / Jan. 2013 1 Preliminary H9TP32A4GDBCPR 4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32) Document Title CI-MCP 4GB eNAND(x8) Flash / 4Gb (x32) LPDDR2-S4B Revision History Revision No. History Draft Date 0.1 - Initial Draft Sep. 2012 0.2 - Corrected Ball Assignment Sep. 2012 - Updated IDD specifications - Corrected tERR(2per, DDR2 1066) in AC TIMING PARAMETERS 0.3 from 135 to 132 Jan. 2013 - Corrected Revision ID1 in MR6 Basic Configuration2 from 00000001B to 00000010B Remark Preliminary Preliminary Preliminary Rev 0.
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