| Description | CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 700 5 32 1.8 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which acc... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IA...
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| Datasheet |
 CS5N70FA9 Datasheet - 828.59KB |
