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Hittite Microwave Corporation
Hittite Microwave Corporation

HMC668LP3 Datasheet Preview

HMC668LP3 Datasheet

SMT LNA W/ Failsafe Bypass Mode

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HMC668LP3 pdf
www.DataSheet4U.com
HMC668LP3 / 668LP3E
v01.0808
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 700 - 1200 MHz
5
Typical Applications
The HMC668LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Tower Mounted Amplifiers
• Test & Measurement Equipment
Functional Diagram
Features
Noise Figure: 0.9 dB
Output IP3: +33 dBm
Gain: 16 dB
Failsafe Operation:
Bypass is enabled when LNA is unpowered
Single Supply: +3V or +5V
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC668LP3(E) is a versatile, high dynamic range
GaAs MMIC Low Noise Amplifier that integrates a low
loss LNA bypass mode on the IC. The amplifier is ide-
al for receivers and LNA modules operating between
0.7 and 1.2 GHz and provides 0.9 dB noise figure,
16 dB of gain and +33 dBm IP3 from a single supply
of +5V @ 57mA. Input and output return losses are
excellent and no external matching components are
required. A single control line is used to switch be-
tween LNA mode and a low loss bypass mode. The
failsafe topology enables the LNA bypass path, when
no DC power is available.
5 - 274
Electrical Specifications, TA = +25° C, Rbias = 0 Ohm
Parameter
LNA Mode
Vdd = +3V
Vdd = +5V
Bypass Mode
Failsafe Mode
Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range
0.7 - 1.2
0.7 - 1.2
0.7 - 1.2
0.7 - 1.2
GHz
Gain
12 15
13 16
-2.5 -1.5
Gain Variation Over Temperature
0.03
0.016
0.0008
Noise Figure
0.85 1.1
0.9 1.1
-2.5 -1.5
0.0008
dB
dB / °C
dB
Input Return Loss
Output Return Loss
12 13 12 12 dB
13 14 13 13 dB
Reverse Isolation
22 23
-
- dB
Power for 1dB Compression
(P1dB)[1]
13 13 22 24 dBm
Third Order Intercept (IP3)[2]
27
33
26
26 dBm
Supply Current (Idd)
Switching Speed (90% -10%)
LNA Mode to Bypass Mode
Bypass Mode to LNA Mode
32 40
85
57 70
85
0.05
200
- mA
- ns
ns
[1] P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass and Failsafe Modes are referenced to RFIN.
[2] IP3 for LNA Mode is referenced to RFOUT while IP3 for Bypass and Failsafe Modes are referenced to RFIN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com



Hittite Microwave Corporation
Hittite Microwave Corporation

HMC668LP3 Datasheet Preview

HMC668LP3 Datasheet

SMT LNA W/ Failsafe Bypass Mode

No Preview Available !

HMC668LP3 pdf
www.DataSheet4U.com
HMC668LP3 / 668LP3E
v01.0808
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 700 - 1200 MHz
LNA - Broadband Gain & Return Loss
25
20
15 S21
10
5
Vdd=5V
0 Vdd=3V
-5 S22
-10
-15
-20
S11
-25
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FREQUENCY (GHz)
2
LNA - Gain vs. Temperature [1]
22
20
+25C
+85C
-40C
18
16
14
12
10
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
5
LNA - Gain vs. Temperature [2]
22
20
+25C
+85C
-40C
18
16
14
12
10
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
LNA - Noise Figure vs. Temperature [3]
2
1.7 Vdd=5V
Vdd=3V
+85C
1.4
+25C
1.1
0.8
0.5
-40C
0.2
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
LNA - Return Loss vs. Temperature [1]
0
+25C
-5 +85C
-40C Output Return Loss
-10
-15
Input Return Loss
-20
-25
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
LNA - Output IP3 vs.
Temperature, Output Power @ 0 dBm
48 42
43 37
38 Vdd=5V 32
33
Vdd=3V
28
27
22
23
+25C
17
+85C
-40C
18 12
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
Frequency (GHz)
[1] Vdd = 5V [2] Vdd = 3V [3] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 275


Part Number HMC668LP3
Description SMT LNA W/ Failsafe Bypass Mode
Maker Hittite Microwave Corporation
Total Page 10 Pages
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