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Hittite Microwave
Hittite Microwave

HMC584LP5 Datasheet Preview

HMC584LP5 Datasheet

GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO

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HMC584LP5 pdf
HMC584LP5 / 584LP5E
v03.1210 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 12.5 - 13.9 GHz
Typical Applications
Low noise MMIC VCO w/Half Frequency, Divide-by-4
Outputs for:
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
• Military End-Use
Features
Dual Output: Fo = 12.5 - 13.9 GHz
Fo/2 = 6.25 - 6.95 GHz
Pout: +10 dBm
Phase Noise: -110 dBc/Hz @100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
Functional Diagram
General Description
The HMC584LP5 & HMC584LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
The HMC584LP5 & HMC584LP5E integrate resona-
tors, negative resistance devices, varactor diodes
and feature half frequency and divide-by-4 outputs.
The VCO’s phase noise performance is excellent over
8 temperature, shock, and process due to the oscillator’s
monolithic structure. Power output is +10 dBm typical
from a +5V supply voltage. The prescaler and RF/2
functions can be disabled to conserve current if not
required. The voltage controlled oscillator is packaged
in a leadless QFN 5x5 mm surface mount package,
and requires no external matching components.
8-1
Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Frequency Range
Parameter
Power Output
SSB Phase Noise @ 100 kHz Offset,
Vtune= +5V @ RFOUT
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 12V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Fo
Fo/2
RFOUT
RFOUT/2
RFOUT/4
Min.
+7
+8
-9
Vtune
Icc(Dig) + Icc(Amp) + Icc(RF)
2
290
1/2
3/2
2nd
3rd
Typ.
12.5 - 13.9
6.25 - 6.95
-110
330
2
28
34
29
40
3
20
1.5
Max.
+14
+14
-3
12
380
10
Units
GHz
GHz
dBm
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com



Hittite Microwave
Hittite Microwave

HMC584LP5 Datasheet Preview

HMC584LP5 Datasheet

GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO

No Preview Available !

HMC584LP5 pdf
HMC584LP5 / 584LP5E
v03.1210 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 12.5 - 13.9 GHz
Frequency vs. Tuning Voltage, Vcc = +5V
15.2
14.4
13.6
12.8
12
11.2
+25C
+85C
-40C
10.4
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Sensitivity vs. Tuning Voltage, Vcc = +5V
800
700
600 +25C
+85C
500 -40C
400
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
SSB Phase Noise vs. Tuning Voltage
-70
-80
-90
-100
-110
10kHz OFFSET
100kHz OFFSET
-120
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Frequency vs. Tuning Voltage, T= 25°C
15.2
14.4
13.6
12.8
12
11.2
4.75V
5.00V
5.25V
10.4
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Output Power
vs. Tuning Voltage, Vcc = +5V
16
14
12
10
8
6 +25C
+85C
4 -40C
2
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
SSB Phase Noise @ Vtune = +5V
0
-20
-40
-60
-80
-100
+25C
+85C
-40C
-120
-140
-160
-180
103
104 105 106
OFFSET FREQUENCY (Hz)
107
8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8-2


Part Number HMC584LP5
Description GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO
Maker Hittite Microwave
Total Page 6 Pages
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