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Hitachi Power Semiconductor Device Electronic Components Datasheet

K1626 Datasheet

2SK1626

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K1626 pdf
2SK1628, 2SK1629
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3PL
D
G1
2
3
1. Gate
2. Drain
3. Source
S



Hitachi Power Semiconductor Device Electronic Components Datasheet

K1626 Datasheet

2SK1626

No Preview Available !

K1626 pdf
2SK1628, 2SK1629
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1628
2SK1629
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
30
120
30
200
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



Hitachi Power Semiconductor Device Electronic Components Datasheet

K1626 Datasheet

2SK1626

No Preview Available !

K1626 pdf
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
Drain to source
breakdown voltage
2SK1628 V(BR)DSS
2SK1629
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1628 IDSS
drain current
2SK1629
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1628 RDS(on)
on state resistance 2SK1629
2.0
Forward transfer admittance |yfs|
12
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note 1. Pulse test
Typ Max
——
——
±10
— 250
0.20
0.22
20
2800
780
90
32
140
200
100
1.1
3.0
0.25
0.27
600 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
2SK1628, 2SK1629
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 V *1
ID = 15 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 15 A, VGS = 10 V,
RL = 2
IF = 30 A, VGS = 0
IF = 30 A, VGS = 0,
diF/dt = 100 A/µs
See characteristics curves of 2SK1169, 2SK1170
3




Part Number K1626
Description 2SK1626
Maker Hitachi Semiconductor
Total Page 6 Pages
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