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Hitachi Power Semiconductor Device Electronic Components Datasheet

B1032 Datasheet

2SB1032

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B1032 pdf
2SB1032(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1436(K)
Outline
TO-3P
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
2
1
1.0 k
(Typ)
200
(Typ)
3
ID


Hitachi Power Semiconductor Device Electronic Components Datasheet

B1032 Datasheet

2SB1032

No Preview Available !

B1032 pdf
2SB1032(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
C to E diode forward current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
ID*1
PC * 1
Tj
Tstg
Rating
–120
–120
–7
–10
–15
10
80
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
–120
Emitter to base breakdown
voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note: 1. Pulse test
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
t on
t off
1000
Typ
0.8
4.0
Max Unit
—V
—V
–100 µA
–10 µA
20000
–1.5 V
–3.0 V
–2.0 V
–3.5 V
3.0 V
µs
µs
Test conditions
IC = –25 mA, RBE =
IE = –200 mA, IC = 0
VCB = –120 V, IE = 0
VCE = –100 V, RBE =
VCE = –3 V, IC = –5 A*1
IC = –5 A, IB = –10 mA*1
IC = –10 A, IB = –0.1 A*1
IC = –5 A, IB = –10 mA*1
IC = –10 A, IB = –0.1 A*1
ID = 10 A*1
VCC = –30 V,
IC = –5 A, IB1 = –IB2 = –10 mA
2


Part Number B1032
Description 2SB1032
Maker Hitachi Semiconductor
Total Page 6 Pages
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