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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2122S Datasheet

Silicon NPN Epitaxial

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2SD2122S pdf
2SD2122(L)/(S), 2SD2123(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1409(L)/(S)
Outline
DPAK
4
1
2
3
S Type
4
12 3
L Type
1. Base
2. Collector
3. Emitter
4. Collector


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2122S Datasheet

Silicon NPN Epitaxial

No Preview Available !

2SD2122S pdf
2SD2122(L)/(S), 2SD2123(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Ratings
2SD2122(L)/(S) 2SD2123(L)/(S) Unit
180 180 V
120 160 V
55V
1.5 1.5 A
33A
18 18 W
150 150 °C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SD2122(L)/(S) 2SD2123(L)/(S)
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
180 —
180 —
V
IC = 1 mA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
120 —
160 —
V
IC = 10 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
—— V
IE = 1 mA, IC = 0
Collector cutoff current ICBO
DC current transfer ratio hFE1*2
hFE2
Collector to emitter
saturation voltage
VCE(sat)
Base to emitter voltage VBE
Gain bandwidth product fT
Collector output
capacitance
Cob
— — 10 — — 10 µA VCB = 160 V, IE = 0
60 — 200 60 — 200 A
VCE = 5 V, IC = 150 mA*1
30 — — 30 — —
VCE = 5 V, IC = 500 mA*1
——1
——1
V IC = 500 mA,
IB = 50 mA*1
— — 1.5 — — 1.5 V
VCE = 5 V, IC = 150 mA*1
— 180 — — 180 — MHz VCE = 5 V, IC = 150 mA*1
— 14 — — 14 — pF VCB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. Pulse test
2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by hFE1 as follows.
B
60 to 120
C
100 to 200
2


Part Number 2SD2122S
Description Silicon NPN Epitaxial
Maker Hitachi Semiconductor
Total Page 7 Pages
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