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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2121S Datasheet

Silicon NPN Epitaxial

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2SD2121S pdf
2SD2121(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1407(L)/(S)
Outline
DPAK
4
4
1
2
3
S Type
12 3
L Type
1. Base
2. Collector
3. Emitter
4. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Ratings
35
35
5
2.5
3
18
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2121S Datasheet

Silicon NPN Epitaxial

No Preview Available !

2SD2121S pdf
2SD2121(L)/(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Collector to base breakdown
voltage
V(BR)CBO
35
Collector to emitter breakdown V(BR)CEO
voltage
35
Emitter to base breakdown
voltage
V(BR)EBO
5
——
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
I CBO
hFE1* 1
hFE2
VBE
VCE(sat)
60
20
20
320
1.5
1.0
Notes: 1. The 2SD2121(L)/(S) is grouped by hFE1 as follows.
Unit
V
V
V
µA
V
V
Test conditions
IC = 1 mA, IE = 0
IC = 10 mA, RBE =
IE = 1 mA, IC = 0
VCB = 35 V, IE = 0
VCE = 2 V, IC = 0.5 A*2
VCE = 2 V, IC = 1.5 A*2
VCE = 2 V, IC = 1.5 A*2
IC = 2 A, IB = 0.2 A*2
B
60 to 120
CD
100 to 200 160 to 320
2. Pulse test.
Maximum Collector Dissipation Curve
30
10
Area of Safe Operation
iC(peak)
3.0
PW = 10 ms
20 IC(max)
1.0
10
0.3 Ta = 25°C
1 shot pulse
0.1
0 50 100 150 1 3 10 30 100
Case temperature TC (°C)
Collector to emitter voltage VCE (V)
2


Part Number 2SD2121S
Description Silicon NPN Epitaxial
Maker Hitachi Semiconductor
Total Page 5 Pages
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