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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2106 Datasheet

Silicon NPN Epitaxial

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2SD2106 pdf
2SD2106
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-220FM
123
1. Base
2. Collector
3. Emitter
2
1
3 k
(Typ)
200
(Typ)
3
ID


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2106 Datasheet

Silicon NPN Epitaxial

No Preview Available !

2SD2106 pdf
2SD2106
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC
PC * 1
Tj
Tstg
Rating
120
120
7
6
10
2
25
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
120
Collector to emitter breakdown V(BR)CEO
voltage
120
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note: 1. Pulse test.
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
1000
Typ
Max Unit
—V
—V
—V
10 µA
10
20000
1.5 V
3.0
2.0 V
3.5
Test conditions
IC = 0.1 mA, IE = 0
IC = 25 mA, RBE =
IE = 50 mA, IC = 0
VCB = 100 V, IE = 0
VCE = 100 V, RBE =
VCE = 3 V, IC = 3 A*1
IC = 3 A, IB = 6 mA*1
IC = 6 A, IB = 60 mA*1
IC = 3 A, IB = 6 mA*1
IC = 6 A, IB = 60 mA*1
2


Part Number 2SD2106
Description Silicon NPN Epitaxial
Maker Hitachi Semiconductor
Total Page 6 Pages
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