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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2019 Datasheet

Silicon NPN Epitaxial

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2SD2019 pdf
2SD2019
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
2
3
15 k
(Typ)
0.5 k
(Typ)
1
ID


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2019 Datasheet

Silicon NPN Epitaxial

No Preview Available !

2SD2019 pdf
2SD2019
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
ID*1
Ratings
150
80
8
1.5
3
10
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
150
Collector to emitter breakdown V(BR)CEO
voltage
80
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
I CEO
hFE
hFE
hFE
VCE(sat)
2000
5000
1000
Base to emitter saturation
voltage
VBE(sat)
C to E diode forward voltage
Note: 1. Pulse test.
VD
Typ
Max Unit
—V
—V
—V
5 µA
5 µA
30000
1.5 V
2.0 V
3.0 V
Test conditions
IC = 1 mA, IE = 0
IC = 10 mA, RBE =
IE = 50 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 65 V, RBE =
VCE = 2 V, IC = 0.15 A*1
VCE = 2 V, IC = 1 A*1
VCE = 2 V, IC = 1.5 A*1
IC = 1 A, IB = 1 mA*1
IC = 1 A, IB = 1 mA*1
ID = 1.5 A*1
2


Part Number 2SD2019
Description Silicon NPN Epitaxial
Maker Hitachi Semiconductor
Total Page 6 Pages
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