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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD1978 Datasheet

Silicon NPN Epitaxial/ Darlington

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2SD1978 pdf
2SD1978
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Complementary pair with 2SB1387
Outline
TO-92MOD
2
3
2
1
3
1. Emitter
2. Collector
3. Base
2 k
(Typ)
0.5 k
(Typ)
1
ID


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD1978 Datasheet

Silicon NPN Epitaxial/ Darlington

No Preview Available !

2SD1978 pdf
2SD1978
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
E to C diode forward current
Symbol
VCBO
VCEO
VEBO
IC
ic (peak)
PC
Tj
Tstg
ID
Ratings
120
120
7
1.5
3.0
0.9
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
120
Collector to emitter breakdown V(BR)CEO
voltage
120
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
I CEO
hFE
VCE(sat)1
2000
Base to emitter saturation
voltage
VCE(sat)2
VBE(sat)1
E to C diode forward voltage
Note: 1. Pulse test
VBE(sat)2
VD
Typ
Max Unit
—V
—V
—V
1.0 µA
10 µA
30000
1.5 V
2.0 V
2.0 V
2.5 V
3.0 V
Test conditions
IC = 0.1 mA, IE = 0
IC = 10 mA, RBE =
IE = 50 mA, IC = 0
VCB = 100 V, IE = 0
VCE = 100 V, RBE =
VCE = 3 V, IC = 1 A*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
ID = 1.5 A*1
2


Part Number 2SD1978
Description Silicon NPN Epitaxial/ Darlington
Maker Hitachi Semiconductor
Total Page 6 Pages
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