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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SA1122 Datasheet

Silicon PNP Epitaxial

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2SA1122 pdf
2SA1122
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SA1122 Datasheet

Silicon PNP Epitaxial

No Preview Available !

2SA1122 pdf
2SA1122
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–55
–55
–5
–100
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
voltage
V(BR)CBO
–55
Collector to emitter breakdown V(BR)CEO
voltage
–55
Emitter to base breakdown
voltage
V(BR)EBO
–5
Collector cutoff current
ICBO — —
Emitter cutoff current
IEBO — —
DC current transfer ratio
hFE*1
160 —
Collector to emitter saturation VCE(sat)
voltage
Base to emitter voltage
VBE — —
Note: 1. The 2SA1122 is grouped by hFE as follows.
Grade
B
C
D
Mark
CC
CD
CE
hFE 160 to 320 250 to 500 400 to 800
Max Unit
—V
—V
—V
–0.5 µA
–0.5 µA
800
–0.5 V
–0.75 V
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE =
IE = –10 µA, IC = 0
VCB = –30 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V, IC = –2 mA
IC = –10 mA, IB = –1 mA
VCE = –12 V, IC = –2 mA
See characteristic curves of 2SA836.
2


Part Number 2SA1122
Description Silicon PNP Epitaxial
Maker Hitachi Semiconductor
Total Page 5 Pages
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