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Hitachi Power Semiconductor Device Electronic Components Datasheet

HL6331G Datasheet

(HL6332G) Low Operating Current Visible Laser Diode

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HL6331G pdf
HL6331G/32G
Low Operating Current Visible Laser Diode
ADE-208-819B (Z)
3rd Edition
Dec. 2000
Description
The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW)
structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for
measurement.
Application
Laser leveler
Laser scanner
Measurement
Features
Visible light output
Optical output power
Low operating current
Low operating voltage
Operating temperature
TM mode oscillation
: 635 nm Typ
: 10 mW CW
: 55 mA Typ
: 2.4 V Max
: +60°C
Package Type
HL6331G/32G: G2
Internal Circuit
HL6331G
13
PD LD
Internal Circuit
HL6332G
13
PD LD
22


Hitachi Power Semiconductor Device Electronic Components Datasheet

HL6331G Datasheet

(HL6332G) Low Operating Current Visible Laser Diode

No Preview Available !

HL6331G pdf
HL6331G/32G
Absolute Maximum Ratings (TC = 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Value
10
2
30
–10 to +60
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics (TC = 25°C)
Item
Optical output power
Threshold current
Operating current
Operating voltage
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
parpendicular to the junction
Lasing wavelength
Monitor current
Symbol
PO
Ith
IOp
VOP
ηs
θ//
θ⊥
λp
IS
Min
10
0.40
6
25
630
0.08
Typ
40
55
2.2
0.65
8
31
635
0.15
Max
60
75
2.4
0.90
11
36
640
0.30
Unit
mW
mA
mA
V
mW/mA
deg.
Test Condition
Kink free
PO = 10 mW
PO = 10 mW
6 (mW) / (I(8mW) – I )(2mW)
PO = 10 mW
deg.
PO = 10 mW
nm PO = 10 mW
mA PO = 10 mW, VR(PD) = 5 V
2


Part Number HL6331G
Description (HL6332G) Low Operating Current Visible Laser Diode
Maker Hitachi
Total Page 8 Pages
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