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Hewlett-Packard
Hewlett-Packard

IAM-92516 Datasheet Preview

IAM-92516 Datasheet

High Linearity GaAs FET Mixer

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IAM-92516 pdf
Agilent IAM-92516 High
Linearity GaAs FET Mixer
Data Sheet
Description
Agilent Technologies’s IAM-92516
is a high linearity GaAs FET Mixer
using 0.5 µm enhancement mode
pHEMT technology. This device
houses in Pb-free and Halogen free
16 pins LPCC 3x3[2] plastic
package. The IAM-92516 has built-
in LO buffer amplifier which
requires -3 dBm LO power to
deliver an input third order
intercept point of 27 dBm. LO port
is 50 ohm matched and can be
driven differential or single ended
while IF port is 200 ohm matched
and fully differential. RF port
requires external matching
network for optimum input return
loss and IIP3 performance.
RF and LO frequency range
coverage from 400 to 3500 MHz
and IF coverage is from DC to 300
MHz. This mixer consumes 26 mA
of current from a single 5V supply.
Conversion loss is typically 6 dB
and noise figure is typically 12.5
dB. Excellent output power at 1 dB
compression of 9 dBm. LO to IF,
LO to RF and RF to IF isolation are
greater than 30 dB.
The IAM-92516 is ideally suited for
frequency up/down conversion for
base station radio card receiver
and transmitter, microwave link
transceiver, MMDS, modulation
and demodulation for receiver and
transmitter and general purpose
resistive FET mixer, which require
high linearity. All devices are 100%
RF and DC tested.
Pin Connections and
Package Marking
Notes:
Package marking provides orientation and
identification
“M3” = Device Code
“X” = Month code indicates the month of
manufacture
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Features
DC = 5V @ 26 mA (Typ.)
RF = 1.91 GHz, PinRF = -10 dBm;
LO = 1.7 GHz, PinLO = -3 dBm;
IF = 210 MHz unlesss otherwise
specified
Lead-free Option Available
High Linearity: 27 dBm IIP3
Conversion Loss: 6 dB typical
Wide band operation: 400-3500
MHz RF & LO input DC 300 MHz
IF output
Fully differential or single ended
operation
High P1dB: 9 dBm typical
Low current consumption: 5V@
26 mA typical
Excellent uniformity in product
specifications
Small LPCC 3.0 x 3.0 x 0.75 mm
package
MTTF > 300 years[1]
MSL-1 and lead-free
Tape-and-Reel packaging option
available
Applications
Frequency up/down converter for
base station radio card, microwave
link transceiver, and MMDS
Modulation and demodulation for
receiver and transmitter
General purpose resistive FET
mixer for other high linearity
applications
Notes:
1. Refer to reliability datasheet for detailed
MTTF data.
2. Conform to JEDEC reference outline
MO229 for DRP-N




Hewlett-Packard
Hewlett-Packard

IAM-92516 Datasheet Preview

IAM-92516 Datasheet

High Linearity GaAs FET Mixer

No Preview Available !

IAM-92516 pdf
IAM-92516 Absolute Maximum Ratings[1]
Parameter
Device Voltage
CW RF Input Power[2]
CW LO Input Power[2]
Channel Temperature
Storage Temperature
Units
V
dBm
dBm
°C
°C
Absolute Max.
10
+30
20
150
-65 to 150
Thermal Resistance[2,4]
θch-c = 47.6°C/W
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Assuming DC quiescent conditions and
TA = 25°C.
3. Board (package belly) temperature TB is
25°C. Derate 21 mW/°C for TB > 85°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Electrical Specifications
TA = 25°C, DC =5V @ 26 mA, RF =1.91 GHz, PinRF = -10 dBm; LO =1.7 GHz, PinLO = -3 dBm, IF = 210 MHz unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ. Max. Std Dev.[1]
FRF Frequency Range, RF
FLO Frequency Range, LO
FIF Frequency Range, IF
Id Device Current
MHz 400
3500
MHz 400
3500
MHz DC
300
mA 22 26 30 0.89
Gc[3]
IIP3[2]
Conversion Loss
Input Third Order Intercept Point
dB
dBm 22
6 6.9 0.08
27 0.43
NF[3]
SSB Noise Figure
dB 12.5
P1dB[3]
Output Power at 1 dB Compression
dBm
9
RLRF RF Port Return Loss
dB 19
RLLO LO Port Return Loss
dB 24
RLIF IF Port Return Loss
dB 21
ISOLL-R
LO-RF Isolation
dB 34
ISOLL-I
LO-IF Isolation
dB 56
ISOLR-L
RF-IF Isolation
dB 33
Notes:
1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of
this product and is intended to be used as an estimate for distribution of the typical specification.
2. IIP3 test condition: FRF1 = 1.91 GHz, FRF2 = 1.89 GHz with input power of -10 dBm per tone and LO power = -3 dBm at LO frequency FLO= 1.7 GHz.
3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz.
Simplified Schematic
Figure 1. IAM-92516 Test Board.
2




Hewlett-Packard
Hewlett-Packard

IAM-92516 Datasheet Preview

IAM-92516 Datasheet

High Linearity GaAs FET Mixer

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IAM-92516 pdf
Figure 2. Schematic Diagram of IAM-92516 Test Circuit.
240
Cpk=3.7
200 Stdev=0.43
200
Cpk=1.5
160 Stdev=0.89
160
3 Std
120
+3 Std
120
3 Std
80
+3 Std
80 60
40 40
0
25 26 27
IIP3
LSL=22.0, Nominal=26.8
28 29
0
22 24 26
28
ID
LSL=22.0, Nominal=26.0, USL=30.0
30
Figure 3. Normal Distribution of IIP3, ID, and Conversion Loss.
150
Cpk=3.67
Stdev=0.079
120
90
3 Std
60
+3 Std
30
0
-6.4 -6.2
-6
-5.8 -5.6
CONVERSION LOSS
LSL=-6.9, Nominal=-6.0
-5.4
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
6. Conversion Loss data has de-embed balun loss 0.8 dB @ 210 MHz.
3




Part Number IAM-92516
Description High Linearity GaAs FET Mixer
Maker Hewlett-Packard
Total Page 8 Pages
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