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Hewlett-Packard
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5082-3088 Datasheet Preview

5082-3088 Datasheet

(5082-3xxx) PIN Diodes for RF Switching and Attenuating

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5082-3088 pdf
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PIN Diodes for RF Switching
and Attenuating
Technical Data
1N5719, 1N5767,
5082-3001, 5082-3039,
5082-3077, 5082-3080/81,
5082-3188, 5082-3379
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
Description/Applications
These general purpose switching
diodes are intended for low
power switching applications
such as RF duplexers, antenna
switching matrices, digital phase
shifters, and time multiplex
filters. The 5082-3188 is
optimized for VHF/UHF
bandswitching.
The RF resistance of a PIN diode
is a function of the current
flowing in the diode. These
current controlled resistors are
specified for use in control
applications such as variable RF
attenuators, automatic gain
control circuits, RF modulators,
electricaDllaytatuSnheedetf4ilUte.rcso,manalog
phase shifters, and RF limiters.
Outline 15 diodes are available on
tape and reel. The tape and reel
specification is patterned after
RS-296-D.
0.41 (.016)
0.36 (.014)
1.93 (.076)
1.73 (.068)
CATHODE
25.4 (1.00)
MIN.
4.32 (.170)
3.81 (.150)
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Outline 15
DataShee
Maximum Ratings
Junction Operating and
Storage Temperature Range ................................................ -65°C to +150°C
Power Dissipation 25°C ..................................................................... 250 mW
(Derate linearly to zero at 150°C)
Peak Inverse Voltage (PIV) ........................................................ same as VBR
Maximum Soldering Temperature ....................................... 260°C for 5 sec
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Hewlett-Packard
Hewlett-Packard

5082-3088 Datasheet Preview

5082-3088 Datasheet

(5082-3xxx) PIN Diodes for RF Switching and Attenuating

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5082-3088 pdf
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Mechanical
Specifications
The Agilent Outline 15 package
has a glass hermetic seal with
dumet leads. The lead finish is 95-
5 tin-lead (SnPb) for all PIN
diodes. The leads on the Outline
15 package should be restricted
so that the bend starts at least 1/
16 inch (1.6 mm) from the glass
body. Typical package inductance
and capacitance are 2.5 nH and
0.13 pF, respectively. Marking is
by digital coding with a cathode
band.
General Purpose Diodes
Electrical Specifications at TA = 25°C
Part
Number
5082-
Maximum
Total
Capacitance
CT (pF)
Minimum
Breakdown
Voltage
VBR (V)
Maximum
Residual Series
Resistance
RS ()
General Purpose Switching and Attenuating
3001
0.25
200
1.0
3039
0.25
150
1.25
1N5719
0.3**
150
1.25
3077
0.3
200
1.5
Band Switching
3188
1.0*
35 0.6**
Test
Conditions
VR = 50 V
*VR = 20 V
**VR = 100 V
f = 1 MHz
VR = VBR
IF =100 mA
Measure DataS*hIFee=t420Um.coAm
IR 10 µA
**IF = 10 mA
f = 100 MHz
Effective Carrier Reverse Recovery
Lifetime
Time
τ (ns)
trr (ns)
100 (min.)
100 (min.)
100 (min.)
100 (min.)
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
70 (typ.)*
IF = 50 mA
IR = 250 mA
*IF = 10 mA
*IR = 6 mA
12 (typ.)
IF = 20 mA
VR = 10 V
90% Recovery
Notes:
Typical CW power switching capability for a shunt switch in a 50 system is 2.5 W.
DataShee
RF Current Controlled Resistor Diodes
Electrical Specifications at TA = 25°C
Part
Number
5082-3080
1N5767*
5082-3379
5082-3081
Effective
Carrier
Lifetime
t (ns)
1300 (typ.)
1300 (typ.)
1300 (typ.)
2500 (typ.)
Max.
Min.
Residual
Max.
Breakdown Series
Total
Voltage Resistance Capacitance
VBR (V)
RS ()
CT (pF)
100 2.5
0.4
100 2.5
0.4
50 0.4
100 3.5
0.4
High
Resistance
Limit, RH (W)
Min.
1000
1000
Max.
1500
Low
Resistance
Limit, RL (W)
Min. Max.
Max.
Difference
in
Resistance
vs. Bias
Slope, Dc
8**
8**
8**
8**
Test
IF = 50 mA VR = VBR, IF = 100 mA VR = 50 V
Conditions IR = 250 mA Measure f = 100 MHz f = 1 MHz
IR 10 µA
IF = 0.01 mA
f = 100 MHz
IF = 1.0 mA
IF = 20 mA**
f = 100 MHz
Batch
Matched at
IF = 0.01 mA
and 1.0 mA
f = 100 MHz
*The 1N5767 has the additional specifications:
DataSheet4U.com
τ = 1.0 msec minimum
IR = 1 µA maximum at VR = 50 V
VF = 1 V maximum at IF = 100 mA.
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Hewlett-Packard
Hewlett-Packard

5082-3088 Datasheet Preview

5082-3088 Datasheet

(5082-3xxx) PIN Diodes for RF Switching and Attenuating

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5082-3088 pdf
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Typical Parameters at TA = 25°C (unless otherwise noted)
100
5082-3001, 3039,
3077, 3080
IN5719
10
1
125°C
25°C
–60°C
0.1
10,000
1000
100
10
1
5082-3001
5082-3039
5082-3077
IN5719
100,000
10,000
1000
100
10
5082-3081
5082-3080
5082-3379
0.01
0 0.2 0.4 0.6 0.8 1.0
VF – FORWARD VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage.
1.2
0.1
0.001 0.01 0.1 1 10 100
IF – FORWARD BIAS CURRENT (mA)
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
1
0.001 0.01 0.1 1 10 100
IF – FORWARD BIAS CURRENT (mA)
Figure 3. Typical RF Resistance vs.
Forward Bias Current.
1.0
.5
5082-3039
IN5719
5082-3001
0
0 10 20 30 40 50 60 70
REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance vs.
Reverse Voltage.
0
10 dB Bridged Tee Attenuator
40 dB mV Output Levels
One Input Frequency Fixed 100 MHz
20
40
5082-3080
60 5082-3379
80
5082-3081
100
0 10 20 30 40 50 60 70 80
FREQUENCY (MHz)
Figure 7. Typical Second Order
Intermodulation Distortion.
2.5 1000
5082-3001
3039
2.0
3077
IN5719
1.5
1.0 DataSheet4U.com
5082-3188
.5
5082-3080
5082-3081
0 5082-3379
0 10 20 30 40 50 60 70
REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance vs.
Reverse Voltage.
100 VR = 5 V
VR = 10 V
VR = 20 V
DataShee
10
0 10 20 30
FORWARD CURRENT (mA)
Figure 6. Typical Reverse Recovery Time
vs. Forward Current for Various Reverse
Driving Voltages.
10
PIN Diode Cross Modulation
20
10 dB Bridged Tee Attenuator
Unmodulated Frequency 100 MHz
30
100% Modulation 15 kHz
40 dB mV Output Levels
40
50
5082-3080
5082-3379
60
70
5082-3081
80
0 10 20 30 40 50 60 70 80
MODULATED FREQUENCY (MHz)
Figure 8. Typical Cross Intermodulation
Distortion.
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Part Number 5082-3088
Description (5082-3xxx) PIN Diodes for RF Switching and Attenuating
Maker Hewlett-Packard
Total Page 4 Pages
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