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H02N60SJ Datasheet Preview

H02N60SJ Datasheet

N-Channel Power Field Effect Transistor

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H02N60SJ pdf
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
H02N60S Series Pin Assignment
Tab
3
2
1
Tab
3
2
Tab 1
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H02N60S Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Derate above 25°C
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
2
8
±30
50
50
25
0.4
0.4
0.33
-55 to 150
35
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification



HI-SINCERITY
HI-SINCERITY

H02N60SJ Datasheet Preview

H02N60SJ Datasheet

N-Channel Power Field Effect Transistor

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H02N60SJ pdf
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 2/6
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case Max.
RθJA Thermal Resistance Junction to Ambient Max.
Value
TO-251 / TO-252
TO-220AB
TO-220FP
62.5
Units
2
2 °C/W
3.3
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=1A)*
gFS Forward Transconductance (VDS50V, ID=1A)*
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
(VDD=300V, ID=2A, RG=18,
VGS=10V)*
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
(VDS=300V, ID=6A, VGS=10V)*
Qgd Gate-Drain Charge
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width 300us, Duty Cycle2%
Min. Typ. Max. Unit
600 - - V
- - 1 uA
- - 50 uA
- - 100 nA
- - -100 nA
2 - 4V
- - 5
1 - - mhos
- 435 -
- 56 - pF
- 9.2 -
- 12 -
- 21 -
ns
- 30 -
- 24 -
- 13 22
- 2 - nC
-6-
- 4.5 - nH
- 7.5 - nH
Source-Drain Diode
Symbol
VSD Forward On Voltage(1)
ton Forward Turn-On Time
trr Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic
IS=2A, VGS=0V, TJ=25oC
IS=2A, VGS=0V, dIS/dt=100A/us
Min. Typ. Max. Units
- - 1.6 V
- ** - ns
- 340 -
ns
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification


Part Number H02N60SJ
Description N-Channel Power Field Effect Transistor
Maker HI-SINCERITY
Total Page 6 Pages
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