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H01N60 Datasheet Preview

H01N60 Datasheet

N-Channel Power Field Effect Transistor

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H01N60 pdf
HI-SINCERITY
MICROELECTRONICS CORP.
H01N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
1A, 600V, RDS(on)=8@VGS=10V
Low Gate Charge 15nC(Typ.)
Low Crss 4pF(Typ.)
Fast Switching
Improved dv/dt Capability
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current (Continuous TC=25oC)
Drain Current (Continuous TC=100oC)
Drain Current (Pulsed) *1
Gate-Source Voltage
Single Pulse Avalanche Energy
(L=59mH, IAS=1.1A, VDD=50V, RG=25, Starting TJ=25°C)
Avalanche Current *1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt *2
Total Power Dissipation (TA=25oC)
PD Total Power Dissipation (TC=25oC)
Derate above 25°C
Tj, Tstg
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
*2: ISD1.1A, di/dt200A/us, VDDBVDSS, Starting TJ=25oC
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 1/5
H01N60 Series Pin Assignment
Tab
3
2
1
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Tab 3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
3
2
1
Pin 3: Source
D
H01N60 Series
Symbol:
G
S
H01N60I / H01N60J
600
1
0.6
4
±30
50
1
2.8
4.5
2.5
28
0.22
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/nS
W
W
W/°C
°C
°C
H01N60I, H01N60J
HSMC Product Specification



HI-SINCERITY
HI-SINCERITY

H01N60 Datasheet Preview

H01N60 Datasheet

N-Channel Power Field Effect Transistor

No Preview Available !

H01N60 pdf
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 2/5
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
4.5
110
Units
°C/W
°C/W
ELectrical Characteristics (TJ=25°C, unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Unit
Off Characteristics
VDSS
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
BVDSS/TJ
Breakdown Voltage Temperature Coefficient (ID=250uA, Referenced
to 25oC)
600
-
-
0.6
-V
- V/oC
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current (VDS=600V, VGS=0V)
Zero Gate Voltage Drain Current (VDS=480V, Tj=125°C)
Gate-Body Leakage Current-Forward (VGS=30V, VDS=0V)
Gate-Body Leakage Current-Reverse (VGS=-30V, VDS=0V)
- - 1 uA
- - 50 uA
- - 100 nA
- - -100 nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=0.6A) *3
Forward Transconductance (VDS=40V, ID=0.5A) *3
Dynamic Characteristics
2-4
- -8
- 0.75 -
V
S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VGS=0V, VDS=25V, f=1MHz
- 210 250
- 19 25 pF
- 48
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=300V, ID=1.1A
RG=25*3
VDS=480V, ID=1.1A
VGS=10V *3
Drain-Source Diode Characteristics and Maximum Ratings
- - 30
- - 60
ns
- - 45
- - 75
- 15 20
- 4 - nC
-3-
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage (VGS=0V, IS=1A)
trr Reverse Recovery Time (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3
Qrr Reverse Recovery Charge (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3
*3: Pulse Test: Pulse Width 300us, Duty Cycle2%
- - 1A
- - 4A
- - 1.4 V
- 190 -
ns
- 0.53 -
nC
H01N60I, H01N60J
HSMC Product Specification


Part Number H01N60
Description N-Channel Power Field Effect Transistor
Maker HI-SINCERITY
Total Page 5 Pages
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