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MBR60035CT GeneSiC Silicon Power Schottky Diode

Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR60020CT thru MBR60040CTR VRRM = 20 V - 40 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60020CT(R) MBR60030CT(R) MBR60035CT(R) MBR60040CT(R) Unit Repetitive peak r...
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
• Not ESD Sensitive MBR60020CT thru MBR60040CTR VRRM = 20 V - 40 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60020CT(R) MBR60030CT(R) MBR60035CT(R) MBR60040CT(R) Unit Repet...

Datasheet PDF File MBR60035CT Datasheet - 712.85KB

MBR60035CT  






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