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Galaxy Semi-Conductor
Galaxy Semi-Conductor

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2SA1162 Datasheet

Silicon Epitaxial Planar Transistor

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2SA1162 pdf
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Low noise:NF=1dB(Typ),10dB(Max).
z Commplementary to 2SC2712.
z Small package.
Pb
Lead-free
www.DataSheet4UA.cPomPLICATIONS
Production specification
2SA1162
z General purpose application.
ORDERING INFORMATION
Type No.
Marking
2SA1162
SO/SY/SG
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-50
VCEO
Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-150
PC Collector Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55~125
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Document number: BL/SSSTC0092
Rev.A
www.galaxycn.com
1



Galaxy Semi-Conductor
Galaxy Semi-Conductor

2SA1162 Datasheet Preview

2SA1162 Datasheet

Silicon Epitaxial Planar Transistor

No Preview Available !

2SA1162 pdf
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
Production specification
2SA1162
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=B 0
-50
V
www.DataSheEetm4Uit.cteomr-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
IEBO
hFE
VCE(sat)
fT
Cob
NF
VCB=-50V,IE=0
VEB=-5V,IC=0
VCE=-6V,IC=-2mA
70
IC=-100mA, IB=B -10mA
VCE=-10V, IC=-1mA
VCB=-10V,IE=0,f=1MHz
VCE=-6V,IC=0.1mA,
f=1MHz,Rg=10k
80
-0.1 μA
-0.1 μA
400
-0.3 V
MHz
7 pF
10 dB
CLASSIFICATION OF hFE(1)
Rank
O
Y
G
Range
70-140
120-240
200-400
Document number: BL/SSSTC0092
Rev.A
www.galaxycn.com
2


Part Number 2SA1162
Description Silicon Epitaxial Planar Transistor
Maker Galaxy Semi-Conductor
Total Page 4 Pages
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